HY5DU281622ET 128M(8Mx16) GDDR SDRAM

Hynix Semiconductor

Description

HY5DU281622ET 128M(8Mx16) GDDR SDRAM HY5DU281622ET This document is a general product .
and is subject to change without notice.

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Datasheet Specifications

Part number: HY5DU281622ET
Manufacturer: Hynix Semiconductor
File Size: 379.07 KB
Datasheet: HY5DU281622ET_HynixSemiconductor.pdf
Description: 128M(8Mx16) GDDR SDRAM

Features

* 2.8V +/- 0.1V VDD and VDDQ power supply supports 400/375/350/333/300MHz 2.5V +/- 5% VDD and VDDQ power supply supports 275/250/200/166MHz All inputs and outputs are compatible with SSTL_2 interface JEDEC Standard 400 mil

Applications

* which require high densities and high bandwidth. The Hynix 8Mx16 DDR SDRAMs offer fully synchronous operations referenced to both rising and falling edges of the clock. While all addresses and control inputs are latched on the rising edges of the CK (falling edges of the /CK), Data, Data strobes and

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HY5DU281622ET 128M8Mx16 GDDR SDRAM Hynix Semiconductor

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