HY27UF161G2M, HY27UF081G2M (HY27UF(08/16)1G2M / HY27SF(08/16)1G2M) 1Gbit (128Mx8bit/64Mx16bit) NAND Flash Memory

Hynix Semiconductor

Description

( DataSheet : www.DataSheet4U.com ) Preliminary HY27UF(08/16)1G2M Series HY27SF(08/16)1G2M Series 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Document .
The HYNIX HY27(U/S)F(08/16)1G2M series is a 128Mx8bit with spare 4Mx8 bit capacity.

📥 Download Datasheet

HY27UF161G2M Datasheet Preview — This datasheet PDF includes multiple part numbers: HY27UF161G2M, HY27UF081G2M. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: HY27UF161G2M, HY27UF081G2M
Manufacturer: Hynix Semiconductor
File Size: 420.81 KB
Datasheet: HY27UF081G2M_HynixSemiconductor.pdf
Description: (HY27UF(08/16)1G2M / HY27SF(08/16)1G2M) 1Gbit (128Mx8bit/64Mx16bit) NAND Flash Memory
Note: This datasheet PDF includes multiple part numbers: HY27UF161G2M, HY27UF081G2M.
Please refer to the document for exact specifications by model.

Applications

* NAND INTERFACE - x8 or x16 bus width. - Multiplexed Address/ Data - Pinout compatibility for all densities FAST BLOCK ERASE - Block erase time: 2ms (Typ. ) STATUS REGISTER ELECTRONIC SIGNATURE - Manufacturer Code - Device Code SUPPLY VOLTAGE - 3.3V device: VCC = 2.7 to 3.6V : HY27UFXX1G2M CHIP ENABLE

HY27UF161G2M Distributors

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HY27UF081G2M HY27UF08 161G2M HY27SF08 161G2M 1Gbit 128Mx8bit 64Mx16bit NAND Flash Memory Hynix Semiconductor

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