H57V1262GTR 128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O

Hynix Semiconductor

Description

www.DataSheet4U.com 128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O Document Title 4Bank x 2M x 16bits Synchronous DRAM Revision History Revision.
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Datasheet Specifications

Part number: H57V1262GTR
Manufacturer: Hynix Semiconductor
File Size: 235.78 KB
Datasheet: H57V1262GTR_HynixSemiconductor.pdf
Description: 128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O

Features

* Voltage: VDD, VDDQ 3.3V supply voltage All device pins are compatible with LVTTL interface 54 Pin TSOPII (Lead Free Package) All inputs and outputs referenced to positive edge of system clock Data mask function by UDQM, LDQM

Applications

* which require wide data I/O and high bandwidth. H57V1262GTR series is organized as 4banks of 2,097,152 x 16. H57V1262GTR is offering fully synchronous operation referenced to a positive edge of the clock. All inputs and outputs are synchronized with the rising edge of the clock input. The data paths

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H57V1262GTR 128Mb Synchronous DRAM based 4Bank x16 Hynix Semiconductor

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