H57V1262GFR 128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O

Hynix Semiconductor

Description

www.DataSheet4U.com 128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O Document Title 4Bank x 2M x 16bits Synchronous DRAM Revision History Revision.
and is subject to change without notice.

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Datasheet Specifications

Part number: H57V1262GFR
Manufacturer: Hynix Semiconductor
File Size: 285.34 KB
Datasheet: H57V1262GFR_HynixSemiconductor.pdf
Description: 128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O

Features

* Voltage: VDD and VDDQ 3.3V supply voltage All device pins are compatible with LVTTL interface 54 Ball FBGA (Lead or Lead Free Package) All inputs and outputs referenced to positive edge of system clock Data mask function by UDQM, LDQM

Applications

* which require wide data I/O and high bandwidth. H57V1262GFR series is organized as 4banks of 2,097,152 x 16. H57V1262GFR is offering fully synchronous operation referenced to a positive edge of the clock. All inputs and outputs are synchronized with the rising edge of the clock input. The data paths

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H57V1262GFR 128Mb Synchronous DRAM based 4Bank x16 Hynix Semiconductor

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