GM72V66841ELT, GM72V66841Exx Datasheet - Hynix Semiconductor

GM72V66841ELT 2M x 8-Bit x 4 Bank SDRAM

The GM72V66841ET/ELT is a synchronous dynamic random access memory comprised of 67,108,864 memory cells and logic including input and output circuits operating synchronously by referring to the positive edge of the externally provided Clock. The GM72V66841ET/ELT provides four banks of 2,097,152 word.

GM72V66841ELT Features

* PC133/PC100/PC66 Compatible -7(143MHz)/-75(133MHz)/-8(125MHz) -7K(PC100,2-2-2)/-7J(PC100,3-2-2)

* 3.3V single Power supply

* LVTTL interface

* Max Clock frequency 143/133/125/100MHz

* 4,096 refresh cycle per 64 ms

* Two kinds of refresh operation Auto refresh / Self refresh

GM72V66841Exx_HynixSemiconductor.pdf

GM72V66841ELT Datasheet Preview — This datasheet PDF includes multiple part numbers: GM72V66841ELT, GM72V66841Exx. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

GM72V66841ELT, GM72V66841Exx

Manufacturer:

Hynix Semiconductor

File Size:

86.71 KB

Description:

2m x 8-bit x 4 bank sdram.

Note:

This datasheet PDF includes multiple part numbers: GM72V66841ELT, GM72V66841Exx.
Please refer to the document for exact specifications by model.

📁 Related Datasheet

GM72V66841ELT 2M x 8-Bit x 4 Bank SDRAM (LG Semicon)

GM72V66841ET 2M x 8-Bit x 4 Bank SDRAM (Hynix Semiconductor)

GM72V66841ET 2M x 8-Bit x 4 Bank SDRAM (LG Semicon)

GM72V66841Exx 2M x 8-Bit x 4 Bank SDRAM (LG Semicon)

GM72V66841Exx 2M x 8-Bit x 4 Bank SDRAM (Hynix Semiconductor)

GM72V66841CLT 2M x 8-Bit x 4 Bank SDRAM (LG Semicon)

GM72V66841CT 2M x 8-Bit x 4 Bank SDRAM (LG Semicon)

GM72V661641D 1M word x 16-Bit x 4 Bank SDRAM (LG Semicon)

TAGS

GM72V66841ELT GM72V66841Exx 8-Bit Bank SDRAM Hynix Semiconductor

GM72V66841ELT Distributor