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IRFU214BA3HD Silicon N-Channel Power MOSFET

IRFU214BA3HD Description

Silicon N-Channel Power MOSFET IRFU214B A3HD ○R General .
IRFU214B A3HD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, impro.

IRFU214BA3HD Applications

* Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID IDMa1 VGS EAS a2 EAR a1 IAR a1 dv/dt a3 PD Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed Drain Current Gate-to-Source Voltage Single

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Silicon N-Channel Power MOSFET Huajing Microelectronics
Huajing Microelectronics IRFU214BA3HD-like datasheet