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IRFU210B 200V N-Channel MOSFET

IRFU210B Description

IRFR210B / IRFU210B November 2001 IRFR210B / IRFU210B 200V N-Channel MOSFET General .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.

IRFU210B Features

* 2.7A, 200V, RDS(on) = 1.5Ω @VGS = 10 V Low gate charge ( typical 7.2 nC) Low Crss ( typical 6.8 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D !
* ◀ ▲
* G S D-PAK IRFR Series I-PAK G D S IRFU Se

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200V N-Channel MOSFET Fairchild Semiconductor
Fairchild Semiconductor IRFU210B-like datasheet