CS9N90ANHD Datasheet (Huajing Microelectronics) - Silicon N-Channel Power MOSFET

CS9N90ANHD, Silicon N-Channel Power MOSFET

CS9N90 ANHD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.

The transistor can be used in various power switching circuit for system miniaturization a

CS9N90ANHD Features

* Fast Switching

* ESD Improved Capability

* Low Gate Charge (Typical Data: 65nC)

* Low Reverse transfer capacitances(Typical: 13pF)

* 100% Single Pulse avalanche energy Test Applications： Power switch circuit of PC POWER. Absolute（Tc= 25℃ unless otherwise specified）： Sym