CS90N03B3 Datasheet (Huajing Microelectronics) - Silicon N-Channel Power MOSFET

CS90N03B3, Silicon N-Channel Power MOSFET

CS90N03 B3, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve VDSS ID PD(TC=25℃) RDS(ON)Typ 25 90 80 4.8 switching performance and enhance the avalanche energy.

The transistor can be used in various power switch

CS90N03B3 Features

* l Trench FET Power MOSFET l Low ON Resistance(Rdson≤6mΩ) l Low Gate Charge (Typical Data:34nC) l Low Reverse transfer capacitances(Typical:291pF) l 100% Single Pulse avalanche energy Test Applications： Automotive,DC Motor Control and Class D Amplifier. Absolute（Tc= 25℃ unless otherwise specified）：