CS8N90A8 - Silicon N-Channel Power MOSFET

Huajing Microelectronics

CS8N90A8 Datasheet Preview — Preview of CS8N90A8 PDF

Datasheet Details

Part number	CS8N90A8
Manufacturer	Huajing Microelectronics
File Size	647.36 KB
Description	Silicon N-Channel Power MOSFET
Datasheet	CS8N90A8-HuajingDiscreteDevices.pdf

CS8N90A8 Product details

Description

CS8N90 A8, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve VDSS ID PD (TC=25℃) RDS(ON)Typ 900 8 130 1.2 switching performance and enhance the avalanche energy.The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.The package form is TO-220AB, which accords with the RoHS standard.

Features

l Fast Switching l Low ON Resistance(Rdson≤1.5Ω) l Low Gate Charge (Typical Data:49nC) l Low Reverse transfer capacitances(Typical:12pF) l 100% Single Pulse avalanche energy Test.

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Published: Dec 6, 2016 |