CS8N90A8 Datasheet (Huajing Microelectronics) - Silicon N-Channel Power MOSFET

CS8N90A8, Silicon N-Channel Power MOSFET

CS8N90 A8, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve VDSS ID PD (TC=25℃) RDS(ON)Typ 900 8 130 1.2 switching performance and enhance the avalanche energy.

The transistor can be used in various power switc

CS8N90A8 Features

* l Fast Switching l Low ON Resistance(Rdson≤1.5Ω) l Low Gate Charge (Typical Data:49nC) l Low Reverse transfer capacitances(Typical:12pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parame