CS8N90FA9D Datasheet (CR Micro) - Silicon N-Channel Power MOSFET

CS8N90FA9D, Silicon N-Channel Power MOSFET

CS8N90F A9D, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.

The transistor can be used in various power switching circuit for system miniaturization a

CS8N90FA9D Features

* l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data:47nC) l Low Reverse transfer capacitances(Typical:12pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（TJ= 25℃ unless otherwise specified）： Symbol Parameter VD