CS7N65FA9TDY - Silicon N-Channel Power MOSFET

Huajing Microelectronics

CS7N65FA9TDY Datasheet Preview — Preview of CS7N65FA9TDY PDF

Datasheet Details

Part number	CS7N65FA9TDY
Manufacturer	Huajing Microelectronics
File Size	749.71 KB
Description	Silicon N-Channel Power MOSFET
Datasheet	CS7N65FA9TDY-HuajingMicroelectronics.pdf

CS7N65FA9TDY Product details

Description

CS7N65F A9TDY, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD(TC=25℃) RDS(ON)Typ 650 7 40 1.1 performance and enhance the avalanche energy.The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.The package form is TO-220F, which accords with the RoHS standard.

Features

l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data:24nC) l Low Reverse transfer capacitances(Typical:4.5pF) l 100% Single Pulse avalanche energy Test.

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Published: Dec 6, 2016 |