CS6N80A0H - Silicon N-Channel Power MOSFET

Huajing Microelectronics

CS6N80A0H Datasheet Preview — Preview of CS6N80A0H PDF

Datasheet Details

Part number	CS6N80A0H
Manufacturer	Huajing Microelectronics
File Size	736.24 KB
Description	Silicon N-Channel Power MOSFET
Datasheet	CS6N80A0H-HuajingDiscreteDevices.pdf

CS6N80A0H Product details

Description

CS6N80 A0H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.The package form is TO-263, which accords with the RoHS standard.

Features

l Fast Switching l Low ON Resistance(Rdson≤2.2Ω) l Low Gate Charge (Typical Data:35nC) l Low Reverse transfer capacitances(Typical:15pF) l 100% Single Pulse avalanche energy Test.

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Published: Dec 6, 2016 |