CS6N80A4R Datasheet (CR Micro) - Silicon N-Channel Power MOSFET

CS6N80A4R, Silicon N-Channel Power MOSFET

CS6N80 A4R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.

The transistor can be used in various power switching circuit for system miniaturization and high

CS6N80A4R Features

* l Fast Switching l Low ON Resistance(Rdson≤2.2Ω) l Low Gate Charge (Typical Data:28.4nC) l Low Reverse transfer capacitances(Typical:4.7pF) l 100% Single Pulse avalanche energy Test VDSS ID PD(TC=25℃) RDS(ON)Typ 800 V 6 A 180 W 1.8 Ω Applications： Power switch circuit of adaptor and char