CS6N60A8H - Silicon N-Channel Power MOSFET

Huajing Microelectronics

CS6N60A8H Datasheet Preview — Preview of CS6N60A8H PDF

Datasheet Details

Part number	CS6N60A8H
Manufacturer	Huajing Microelectronics
File Size	295.16 KB
Description	Silicon N-Channel Power MOSFET
Datasheet	CS6N60A8H-HuajingDiscreteDevices.pdf

CS6N60A8H Product details

Description

CS6N60 A8H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD(TC=25℃) RDS(ON)Typ 600 6 85 1.4 performance and enhance the avalanche energy.The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.The package form is TO-220AB, which accords with the RoHS standard.

Features

l Fast Switching l Low ON Resistance(Rdson≤1.7Ω) l Low Gate Charge (Typical Data: 19.5nC) l Low Reverse transfer capacitances(Typical: 7.5pF) l 100% Single Pulse avalanche energy Test.

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Published: Dec 6, 2016 |