CS4N65FA9R-G - Silicon N-Channel Power MOSFET

Huajing Microelectronics

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Datasheet Details

Part number	CS4N65FA9R-G
Manufacturer	Huajing Microelectronics
File Size	263.49 KB
Description	Silicon N-Channel Power MOSFET
Datasheet	CS4N65FA9R-G-HuajingMicroelectronics.pdf

CS4N65FA9R-G Product details

Description

CS4N65F A9R-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.The package form is TO-220F, which accords with the RoHS standard.

Features

l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data: 14.5nC) l Low Reverse transfer capacitances(Typical:3.5pF) l 100% Single Pulse avalanche energy Test l Halogen Free.

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Published: Dec 17, 2018 |