CS4N65FA9HD - Silicon N-Channel Power MOSFET

HUAJING

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Datasheet Details

Part number	CS4N65FA9HD
Manufacturer	HUAJING
File Size	233.94 KB
Description	Silicon N-Channel Power MOSFET
Datasheet	CS4N65FA9HD-HUAJING.pdf

CS4N65FA9HD Product details

Description

CS4N65FA9HD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.The package form is TO-220F, which accords with the RoHS standard.

Features

z Fast Switching z ESD Improved Capability z Low Gate Charge (Typical Data: 13nC) z Low Reverse transfer capacitances(Typical: 4.2pF) z 100% Single Pulse avalanche energy Test.

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Published: Sep 22, 2015 |