CS3N70A3H-G - Silicon N-Channel Power MOSFET

Huajing Microelectronics

CS3N70A3H-G Datasheet Preview — Preview of CS3N70A3H-G PDF

Datasheet Details

Part number	CS3N70A3H-G
Manufacturer	Huajing Microelectronics
File Size	350.47 KB
Description	Silicon N-Channel Power MOSFET
Datasheet	CS3N70A3H-G-HuajingMicroelectronics.pdf

CS3N70A3H-G Product details

Description

VDSS 700 V CS3N70 A3H-G the silicon N-channel Enhanced ID 3A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 55 W which reduce the conduction loss, improve switching RDS(ON)Typ 3.8 Ω performance and enhance the avalanche energy.The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.The package form is TO-251, which accords with the RoHS standard..

Features

l Fast Switching l Low ON Resistance(Rdson≤4.2 Ω) l Low Gate Charge (Typical Data:11nC) l Low Reverse transfer capacitances(Typical:5pF) l 100% Single Pulse avalanche energy Test.

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Published: Dec 6, 2016 |