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CS3N50B3HY - Silicon N-Channel Power MOSFET

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Part number CS3N50B3HY
Manufacturer Huajing Microelectronics
File Size 200.99 KB
Description Silicon N-Channel Power MOSFET
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Description

VDSS 500 V CS3N50 B3HY, the silicon N-channel Enhanced ID 3A VDMOSFETs, is obtained by the self-aligned planar PD (TC=25℃) 35 W Technology which reduce the conduction loss, improve RDS(ON)Typ 2.4 Ω switching performance and enhance the avalanche energy.The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.The package form is TO-251, which accords with the RoHS standard.

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