CS20N60FA9H - Silicon N-Channel Power MOSFET

Huajing Microelectronics

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Datasheet Details

Part number	CS20N60FA9H
Manufacturer	Huajing Microelectronics
File Size	430.92 KB
Description	Silicon N-Channel Power MOSFET
Datasheet	CS20N60FA9H-HuajingMicroelectronics.pdf

CS20N60FA9H Product details

Description

CS20N60F A9H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD(TC=25℃) RDS(ON)Typ performance and enhance the avalanche energy.The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.The package form is TO-220F, which accords with the RoHS standard..

Features

l Fast Switching l Low ON Resistance(Rdson≤0.45Ω) l Low Gate Charge (Typical Data:61nC) l Low Reverse transfer capacitances(Typical: 20pF) l 100% Single Pulse avalanche energy Test 600 V 20 A 85 W 0.36 Ω.

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Published: Dec 6, 2016 |