CS19N40AN Datasheet (Huajing Microelectronics) - Silicon N-Channel Power MOSFET

CS19N40AN, Silicon N-Channel Power MOSFET

CS19N40 AN, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD(TC=25℃) RDS(ON)Typ 400 19 180 0.18 performance and enhance the avalanche energy.

The transistor can be used in various power swi

CS19N40AN Features

* l Fast Switching l Low ON Resistance(Rdson≤0.24Ω) l Low Gate Charge (Typical Data:54nC) l Low Reverse transfer capacitances(Typical: 37pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Para