CS100N03B8 Silicon N-Channel Power MOSFET

Huajing Microelectronics

Description

Silicon N-Channel Power MOSFET CS100N03 B8 ○R General .
CS100N03 B8, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve V.

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Datasheet Specifications

Part number: CS100N03B8
Manufacturer: Huajing Microelectronics
File Size: 720.75 KB
Datasheet: CS100N03B8-HuajingDiscreteDevices.pdf
Description: Silicon N-Channel Power MOSFET

Applications

* UPS,DC Motor Control and Class D Amplifier. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter Rating VDSS ID I D a1 M VGS EAS a2 EAR a1 IAR a1 dv/dt a3 PD Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 10

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📁 Related Datasheet

CS100N03B8-1 CS100N03B4-1 CS100N03A4-G CS100N06A3 CS100N06A4 CS100N06A8

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CS100N03B8 Silicon N-Channel Power MOSFET Huajing Microelectronics

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