CS100N06D3-G Silicon N-Channel Power Trench MOSFET

CR Micro

Description

Silicon N-Channel Power Trench MOSFET ○R CS100N06 D3-G General .
CS100N06 D3-G the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improv.

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Datasheet Specifications

Part number: CS100N06D3-G
Manufacturer: CR Micro
File Size: 1.68 MB
Datasheet: CS100N06D3-G-CRMicro.pdf
Description: Silicon N-Channel Power Trench MOSFET

Features

* Fast Switching
* Low ON Resistance (Rdson≤10mΩ)
* Low Gate Charge (Typical Data: 88.8nC)
* Low Reverse transfer capacitances(Typical:220pF)
* 100% Single Pulse avalanche energy Test

Applications

* Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID IDMa1 VGS EAS a2 PD TJ，Tstg TL Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed Drain Current Gate-to-Source Voltage Single Pulse Avala

CS100N06D3-G Distributors

📁 Related Datasheet

CS100N03B4 CS100N03B8 CS100N03FB9 CS1001-7R CS1005U CS1008

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CS100N06D3-G Silicon N-Channel Power Trench MOSFET CR Micro

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