CS20N50ANH - Silicon N-Channel Power MOSFET

Huajing Discrete Devices

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Datasheet Details

Part number	CS20N50ANH
Manufacturer	Huajing Discrete Devices
File Size	247.18 KB
Description	Silicon N-Channel Power MOSFET
Datasheet	CS20N50ANH-HuajingDiscreteDevices.pdf

CS20N50ANH Product details

Description

VDSS 500 CS20N50 ANH, the silicon N-channel Enhanced ID 20 VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 230 which reduce the conduction loss, improve switching RDS(ON)Typ 0.25 performance and enhance the avalanche energy.The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.The package form is TO-3P （N）, which accords with the RoHS standard..

Features

l Fast Switching l Low ON Resistance(Rdson≤0.3Ω) l Low Gate Charge (Typical Data:63nC) l Low Reverse transfer capacitances(Typical:25pF) l 100% Single Pulse avalanche energy Test.

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Published: Apr 4, 2016 |