Datasheet Details
| Part number | HXY5N10MI |
|---|---|
| Manufacturer | HuaXuanYang |
| File Size | 3.07 MB |
| Description | N-Channel Enhancement Mode MOSFET |
| Datasheet |
 HXY5N10MI-HuaXuanYang.pdf
|
| Part number | HXY5N10MI |
|---|---|
| Manufacturer | HuaXuanYang |
| File Size | 3.07 MB |
| Description | N-Channel Enhancement Mode MOSFET |
| Datasheet |
HXY5N10MI-HuaXuanYang.pdf
|
The HXY5N10MI uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.
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