HXY5N10MI N-Channel Enhancement Mode MOSFET

Description

HUAXUANYANG HXY ELECTRONICS CO.,LTD HXY5N10MI N-Channel Enhancement Mode MOSFET .
The HXY5N10MI uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.

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Datasheet Specifications

Part number: HXY5N10MI
Manufacturer: HuaXuanYang
File Size: 3.07 MB
Datasheet: HXY5N10MI-HuaXuanYang.pdf
Description: N-Channel Enhancement Mode MOSFET

Applications

* that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your HUA XUAN YANG ELECTRONICS representative nearest you bef

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