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HXY3134CI N-Channel Enhancement Mode MOSFET

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Description

HUAXUANYANG HXY ELECTRONICS CO.,LTD .
The HXY3134CI uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.

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Datasheet Specifications

Part number
HXY3134CI
Manufacturer
HuaXuanYang
File Size
399.10 KB
Datasheet
HXY3134CI-HuaXuanYang.pdf
Description
N-Channel Enhancement Mode MOSFET

Applications

* that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your HUA XUAN YANG ELECTRONICS representative nearest you bef

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