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K2788 2SK2788

K2788 Description

2SK2788 Silicon N Channel MOS FET High Speed Power Switching ADE-208-538 1st.Edition .

K2788 Features

* Low on-resistance R DS(on) = 0.12Ω typ (VGS = 10 V, I D = 1 A)
* Low drive current
* High speed switching
* 4V gate drive devices. Outline UPAK 3 D 2 1 4 G 1. Gate 2. Drain 3. Source 4. Drain S 2SK2788 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source

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2SK2788 Hitachi Semiconductor
Hitachi Semiconductor K2788-like datasheet