HL6339G, HL6342G Datasheet - Hitachi Semiconductor

HL6339G (HL6339G / HL6342G) 633nm Lasing Laser Diode

The HL6339G/42G is 0.63 µm band AlGaInP laser diode with a multi-quantum well (MQW) structure. Lasing wavelength of this laser is nearly equal to the wavelength of He-Ne gas laser. They are suitable as light sources for laser levelers, laser scanners and optical equipment for measurement. Applicati.

HL6339G Features

* Optical output power

* Visible light output : 5 mW (CW) : 633 nm Typ (nearly equal to He-Ne gas laser)

* Low operating current : 55 mA Typ

* Low operating voltage : 2.3 V Typ

* TM mode oscillation Package Type

* HL6339G/42G: G2 Internal Circuit

HL6342G_HitachiSemiconductor.pdf

HL6339G Datasheet Preview — This datasheet PDF includes multiple part numbers: HL6339G, HL6342G. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

HL6339G, HL6342G

Manufacturer:

Hitachi Semiconductor

File Size:

71.31 KB

Description:

(hl6339g / hl6342g) 633nm lasing laser diode.

Note:

This datasheet PDF includes multiple part numbers: HL6339G, HL6342G.
Please refer to the document for exact specifications by model.

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HL6339G HL6342G HL6339G HL6342G 633nm Lasing Laser Diode Hitachi Semiconductor

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