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HL6313G, HL6312G Datasheet - Hitachi Semiconductor

HL6313G (HL6312G / HL6313G) AlGaInP Laser Diodes

The HL6312/13G are 0.63 µm band AlGaInP laser diodes with a multi-quantum well (MQW) structure. Wavelength is equal to He-Ne Gas laser. They are suitable as light sources in bar code readers, laser levelers and various other types of optical equipment. Hermetic sealing of the package achieves high r.

HL6313G Features

* Visible light output: λp = 635 nm Typ (nearly equal to He-Ne Gas Laser) Optical output power: 5 mW CW Low Operating voltage: 2.7 V Max Single longitudinal mode Built-in photodiode for monitoring laser output 99 www.DataSheet4U.com HL6312/13G Absol

HL6312G_HitachiSemiconductor.pdf

This datasheet PDF includes multiple part numbers: HL6313G, HL6312G. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number:

HL6313G, HL6312G

Manufacturer:

Hitachi Semiconductor

File Size:

61.12 KB

Description:

(hl6312g / hl6313g) algainp laser diodes.

Note:

This datasheet PDF includes multiple part numbers: HL6313G, HL6312G.
Please refer to the document for exact specifications by model.

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TAGS

HL6313G HL6312G HL6312G HL6313G AlGaInP Laser Diodes Hitachi Semiconductor

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