2SK360 Datasheet (Hitachi Semiconductor)

2SK360, N-Channel MOSFET

2SK360 Silicon N-Channel MOS FET Application VHF amplifier Outline MPAK 3 1 2 1.

Gate 2.

Drain 3.

Source 2SK360 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Gate current Channel power dissipation Channel temperature Storage temperature Note: 1.

VGS = 4 V Symbol VDSX VGSS ID IG Pch Tch Tstg 1 Ratings 20 ±5 30 ±1 150 150 55 to +150 Unit V V mA mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Drain to so