2SK2216 - Silicon N-Channel MOS FET

Hitachi Semiconductor

Datasheet Details

Part number	2SK2216
Manufacturer	Hitachi Semiconductor
File Size	47.53 KB
Description	Silicon N-Channel MOS FET
Datasheet	2SK2216_HitachiSemiconductor.pdf

High power output, high gain, high efficiency PG = 9.7 dB, Pout = 140 W, ηD = 55% typ (f = 860 MHz).
Compact package Suitable for push - pull circuit Outline 2SK2216 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Channel dissipation Channel temperature Storage temperature Note: 1. Value at TC = 25°C Symbol VDSS VGSS ID Pch.
Tch Tstg 1 Ratings 60 ±10 20 150 150.
55 to +150 Unit V V A W °C °C Electrical Cha.

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Published: Mar 30, 2005 |