2SK2203 - Silicon N-Channel MOS FET

Hitachi Semiconductor

Datasheet Details

Part number	2SK2203
Manufacturer	Hitachi Semiconductor
File Size	50.16 KB
Description	Silicon N-Channel MOS FET
Datasheet	2SK2203_HitachiSemiconductor.pdf

Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for Switching regulator, DC-DC converter Outline TO-3PFM D G 1 2 3 S 1. Gate 2. Drain 3. Source 2SK2203 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation.

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Published: Mar 30, 2005 |