2SK1296 - Silicon N-Channel MOS FET

Hitachi Semiconductor

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Datasheet Details

Part number	2SK1296
Manufacturer	Hitachi Semiconductor
File Size	75.93 KB
Description	Silicon N-Channel MOS FET
Datasheet	2SK1296_HitachiSemiconductor.pdf

2SK1296 Product details

Description

2SK1296 Power vs.Temperature Derating 150 Channel Dissipation Pch (W) Maximum Safe Operation Area 500 200 10 Drain Current ID (A) 100 50 20 10 5 2 1.0 PW µs 10 0 www.DataSheet4U.com 100 µs 1 = s m D C 10 O m pe s ra (1 50 tio Operation in this area is limited by RDS (on) Ta = 25°C n Sh (T ot ) C = 25 °C ) 0 50 100 Case Temperature TC (°C) 150 0.5 0.1 100 0.3 1.0 3 10 30 Drain to Source Voltag

Features

www. DataSheet4U. com.
Low on-resistance High speed switching Low drive current 4 V gate drive device.
Can be driven from 5 V source.
Suitable for motor drive, DC-DC converter, power switch and solenoid drive 2 1 2 3 1 1. Gate 2. Drain (Flange) 3. Source 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel di.

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Published: Oct 31, 2008 |