Datasheet4U Logo Datasheet4U.com

2SK1299L - Silicon N-Channel MOSFET

Features

  • Low on-resistance High speed switching Low drive current 4 V gate drive device  Can be driven from 5 V source.
  • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline DPAK-1 4 4 1 1 D G 1. Gate 2. Drain 3. Source 4. Drain S 2 3 2 3 2SK1299(L), 2SK1299(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain curren.

📥 Download Datasheet

📁 Similar Datasheet

  • 2SK12996 - N-Channel MOSFET (Toshiba Semiconductor)
  • 2SK1290 - SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL (NEC)
  • 2SK1292 - SWITCHING N-CHANNEL POWER MOSFET (NEC)
  • 2SK1293 - MOS Field Effect Power Transistor (NEC)
  • 2SK1294 - N-Channel Power MOS FET (Renesas)
  • 2SK1295 - SWITCHING N-CHANNEL POWER MOS FET (NEC)
  • 2SK12 - Silicon N-Channel Transistor (Toshiba)
  • 2SK1200 - N-Channel MOSFET Transistor (Inchange Semiconductor)
  • 2SK1201 - N-Channel MOSFET Transistor (Inchange Semiconductor)
  • 2SK1202 - N-Channel MOSFET Transistor (Inchange Semiconductor)
Other Datasheets by Hitachi Semiconductor
  • 2SK1299 - Silicon N-Channel MOSFET
  • 2SK1299S - Silicon N-Channel MOSFET
  • 2SK1296 - Silicon N-Channel MOS FET
  • 2SK1297 - Silicon N-Channel MOS FET
  • 2SK1298 - Silicon N-Channel MOSFET
  • 2SK1204 - Silicon N-Channel MOS FET
  • 2SK1215 - Silicon N-Channel MOSFET
  • 2SK1254 - Silicon N-Channel MOSFET

Full PDF Text Transcription

Click to expand full text
2SK1299(L), 2SK1299(S) Silicon N-Channel MOS FET Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device  Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline DPAK-1 4 4 1 1 D G 1. Gate 2. Drain 3. Source 4. Drain S 2 3 2 3 2SK1299(L), 2SK1299(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2.
Published: |