2SC3652 Datasheet (Hitachi Semiconductor) - SILICON NPN EPITAXIAL TRANSISTOR

2SC3652, SILICON NPN EPITAXIAL TRANSISTOR

2SC3652 Silicon NPN Epitaxial Application High frequency amplifier Outline TO-126 MOD 123 1.

Emitter 2.

Collector 3.

Base Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Note: 1.

Value at TC = 25°C Symbol VCBO VCEO VEBO IC IC(peak) PC PC 1 Tj Tstg Ratings 30 20 3.5 0.3 0.5 0.8 5 150 55 to +150 U