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HSD880, HSD880_Hi NPN EPITAXIAL PLANAR TRANSISTOR

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Description

HI-SINCERITY MICROELECTRONICS CORP.HSD880 NPN EPITAXIAL PLANAR TRANSISTOR Spec.No.: HE6729 Issued Date : 1992.11.25 Revised Date : 2004.11.19 Page.
The HSD880 is designed for low frequency power amplifier applications. High DC Current Gain. High Power Dissipation: PC=3.

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This datasheet PDF includes multiple part numbers: HSD880, HSD880_Hi. Please refer to the document for exact specifications by model.
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Datasheet Specifications

Part number
HSD880, HSD880_Hi
Manufacturer
Hi-Sincerity Mocroelectronics
File Size
41.55 KB
Datasheet
HSD880_Hi-SincerityMocroelectronics.pdf
Description
NPN EPITAXIAL PLANAR TRANSISTOR
Note
This datasheet PDF includes multiple part numbers: HSD880, HSD880_Hi.
Please refer to the document for exact specifications by model.

Features

* High DC Current Gain
* High Power Dissipation: PC=30W at TC=25°C TO-220 Absolute Maximum Ratings (TA=25°C)
* Maximum Temperatures Storage Temperature -50 ~ +150 °C Junction Temperature +150 °C Maximum
* Maximum Power Dissipation Total Power Dissipation (TC=25°C)

HSD880 Distributors

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Hi-Sincerity Mocroelectronics HSD880-like datasheet