HSD879D Features
* Charger-up time is about 1 ms faster than of a germanium transistor.
* Small saturation voltage can bring less power dissipation and flashing times. TO-126ML Absolute Maximum Ratings
* Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C M
HSD879D_Hi-SincerityMocroelectronics.pdf
Datasheet Details
HSD879D, HSD879D_Hi
Hi-Sincerity Mocroelectronics
41.46 KB
Silicon npn epitaxial type transistor.
This datasheet PDF includes multiple part numbers: HSD879D, HSD879D_Hi.
Please refer to the document for exact specifications by model.
HSD879D Distributor
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