HSD879D, HSD879D_Hi SILICON NPN EPITAXIAL TYPE TRANSISTOR

Hi-Sincerity Mocroelectronics

Description

HI-SINCERITY MICROELECTRONICS CORP.HSD879D SILICON NPN EPITAXIAL TYPE TRANSISTOR Spec.No.: HD200203 Issued Date : 1996.07.15 Revised Date : 2006.0.
For 1. Charger-up time is about 1 ms faster than of a germanium transistor. Small saturat.

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HSD879D Datasheet Preview — This datasheet PDF includes multiple part numbers: HSD879D, HSD879D_Hi. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: HSD879D, HSD879D_Hi
Manufacturer: Hi-Sincerity Mocroelectronics
File Size: 41.46 KB
Datasheet: HSD879D_Hi-SincerityMocroelectronics.pdf
Description: SILICON NPN EPITAXIAL TYPE TRANSISTOR
Note: This datasheet PDF includes multiple part numbers: HSD879D, HSD879D_Hi.
Please refer to the document for exact specifications by model.

Features

* Charger-up time is about 1 ms faster than of a germanium transistor.
* Small saturation voltage can bring less power dissipation and flashing times. TO-126ML Absolute Maximum Ratings
* Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C M

HSD879D Distributors

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HSD879D_Hi SILICON NPN EPITAXIAL TYPE TRANSISTOR Hi-Sincerity Mocroelectronics

Hi-Sincerity Mocroelectronics HSD879D-like datasheet