HSC1959SP, HSC1959SP_Hi NPN EPITAXIAL PLANAR TRANSISTOR

Hi-Sincerity Mocroelectronics

Description

HI-SINCERITY MICROELECTRONICS CORP.Spec.No.: HSP200203 Issued Date : 1998.01.06 Revised Date : 2002.03.04 Page No.: 1/3 HSC1959SP NPN EPITAXIAL .
The HSC1959Y is designed for audio frequency Low power amplifier applications. Execellent hFE linearity. Complementary to.

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HSC1959SP Datasheet Preview — This datasheet PDF includes multiple part numbers: HSC1959SP, HSC1959SP_Hi. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: HSC1959SP, HSC1959SP_Hi
Manufacturer: Hi-Sincerity Mocroelectronics
File Size: 27.21 KB
Datasheet: HSC1959SP_Hi-SincerityMocroelectronics.pdf
Description: NPN EPITAXIAL PLANAR TRANSISTOR
Note: This datasheet PDF includes multiple part numbers: HSC1959SP, HSC1959SP_Hi.
Please refer to the document for exact specifications by model.

Features

* Execellent hFE linearity
* Complementary to HSA562 Absolute Maximum Ratings
* Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature 150 °C Maximum
* Maximum Power Dissipation Total Power Dissipation (Ta=25°C) 500 mW
* Maximum Voltag

HSC1959SP Distributors

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HSC1959SP_Hi NPN EPITAXIAL PLANAR TRANSISTOR Hi-Sincerity Mocroelectronics

Hi-Sincerity Mocroelectronics HSC1959SP-like datasheet