HSC1959, HSC1959_Hi - NPN EPITAXIAL PLANAR TRANSISTOR

Hi-Sincerity Mocroelectronics

Datasheet Details

Part number	HSC1959, HSC1959_Hi
Manufacturer	Hi-Sincerity Mocroelectronics
File Size	51.98 KB
Description	NPN EPITAXIAL PLANAR TRANSISTOR
Datasheet	HSC1959_Hi-SincerityMocroelectronics.pdf
Note	This datasheet PDF includes multiple part numbers: HSC1959, HSC1959_Hi. Please refer to the document for exact specifications by model.

The HSC1959 is designed for audio frequency Low power amplifier applications.

Excellent hFE Linearity TO-92 Absolute Maximum Ratings.
Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature 150 °C Maximum.
Maximum Power Dissipation Total Power Dissipation (TA=25°C) 500 mW.
Maximum Voltages and Currents (TA=25°C) VCBO Collector to Base Voltage.

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Published: Mar 26, 2005 |