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HJ6668, HJ6668_Hi PNP EPITAXIAL PLANAR TRANSISTOR

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Description

HI-SINCERITY MICROELECTRONICS CORP.Spec.No.: Preliminary Data Issued Date : 1999.03.01 Revised Date : 2000.11.01 Page No.: 1/3 HJ6668 PNP EPITAX.
The HJ6668 is designed for general-purpose amplifier and switching applications. Maximum Temperatures St.

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This datasheet PDF includes multiple part numbers: HJ6668, HJ6668_Hi. Please refer to the document for exact specifications by model.
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Datasheet Specifications

Part number
HJ6668, HJ6668_Hi
Manufacturer
Hi-Sincerity Mocroelectronics
File Size
31.80 KB
Datasheet
HJ6668_Hi-SincerityMocroelectronics.pdf
Description
PNP EPITAXIAL PLANAR TRANSISTOR
Note
This datasheet PDF includes multiple part numbers: HJ6668, HJ6668_Hi.
Please refer to the document for exact specifications by model.

Applications

* Absolute Maximum Ratings (Ta=25°C)
* Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum
* Maximum Power Dissipation Total Power Dissipation (Tc=25°C) 65 W
* Maximum Voltages and Currents BVCBO Collector to Base Voltage -80 V BVCE

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