HJ122, HJ122_Hi - NPN EPITAXIAL PLANAR TRANSISTOR

Hi-Sincerity Mocroelectronics

Datasheet Details

Part number	HJ122, HJ122_Hi
Manufacturer	Hi-Sincerity Mocroelectronics
File Size	95.62 KB
Description	NPN EPITAXIAL PLANAR TRANSISTOR
Datasheet	HJ122_Hi-SincerityMocroelectronics.pdf
Note	This datasheet PDF includes multiple part numbers: HJ122, HJ122_Hi. Please refer to the document for exact specifications by model.

TO-252 The HJ122 is designed for use in general purposes and low speed switching applications.Darlington Schematic C

High DC current gain.
Built-in a damper diode at E-C Absolute Maximum Ratings (TA=25°C) B R1 R2 E.
Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C.
Maximum Power Dissipation Total Power Dissipation (TC=25°C) 20 W.
Maximum Voltages and Currents (TA=25°C) BVCBO Colle.

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Published: Mar 23, 2005 |