Datasheet4U Logo Datasheet4U.com

HJ112, HJ112_Hi - NPN EPITAXIAL PLANAR TRANSISTOR

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: HJ112, HJ112_Hi. Please refer to the document for exact specifications by model.
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number HJ112, HJ112_Hi
Manufacturer Hi-Sincerity Mocroelectronics
File Size 104.24 KB
Description NPN EPITAXIAL PLANAR TRANSISTOR
Datasheet download datasheet HJ112_Hi-SincerityMocroelectronics.pdf
Note This datasheet PDF includes multiple part numbers: HJ112, HJ112_Hi.
Please refer to the document for exact specifications by model.

HJ112 Product details

Description

The HJ112 is designed for use in general purpose amplifier and low-speed switching applications. Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature 150 °C Maximum Maximum Power Dissipation Total Power Dissipation (TC=25°C) 20 W Maximum Voltages and Currents (TA=25°C) VCBO Collector to Base Voltage

📁 HJ112 Similar Datasheet

  • HJ11867 - Three-channel fluxgate signal processing IC (ETC)
  • HJ12003 - Power Divider (Signal)
  • HJ13002 - NPN Epitaxial Silicon Transistor (Hefei Hejing)
  • HJ1602A - Dot Matrix LCD (Ovation)
Other Datasheets by Hi-Sincerity Mocroelectronics
Published: |