HJ112, HJ112_Hi NPN EPITAXIAL PLANAR TRANSISTOR

Hi-Sincerity Mocroelectronics

Description

HI-SINCERITY MICROELECTRONICS CORP.HJ112 NPN EPITAXIAL PLANAR TRANSISTOR Spec.No.: HE6030 Issued Date : 1998.07.01 Revised Date : 2006.04.09 Page .
The HJ112 is designed for use in general purpose amplifier and low-speed switching applications.

📥 Download Datasheet

HJ112 Datasheet Preview — This datasheet PDF includes multiple part numbers: HJ112, HJ112_Hi. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: HJ112, HJ112_Hi
Manufacturer: Hi-Sincerity Mocroelectronics
File Size: 104.24 KB
Datasheet: HJ112_Hi-SincerityMocroelectronics.pdf
Description: NPN EPITAXIAL PLANAR TRANSISTOR
Note: This datasheet PDF includes multiple part numbers: HJ112, HJ112_Hi.
Please refer to the document for exact specifications by model.

Applications

* Absolute Maximum Ratings (TA=25°C) TO-252
* Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature 150 °C Maximum
* Maximum Power Dissipation Total Power Dissipation (TC=25°C) 20 W
* Maximum Voltages and Currents (TA=25°C) VCBO Collector to Base V

HJ112 Distributors

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HJ112_Hi NPN EPITAXIAL PLANAR TRANSISTOR Hi-Sincerity Mocroelectronics

Hi-Sincerity Mocroelectronics HJ112-like datasheet