Description
HI-SINCERITY MICROELECTRONICS CORP.Spec.No.: MOS200406 Issued Date : 2004.10.01 Revised Date : 2005.04.22 Page No.: 1/4 HIRF730 / HIRF730F N-CHA.
Third Generation HEXFETs from international Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low.
Features
* Dynamic dv/dt Rating
* Repetitive Avalanche Rated
* Fast Switching
* Ease of Paralleling
* Simple Drive Requirements
1
3-Lead Plastic TO-220FP Package Code: F Pin 1: Gate Pin 2: Drain Pin 3: Source 3
2
Thermal Characteristics
Symbol RθJC RθJA Parameter Th
Applications
* or systems.
* HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory:
* Head Office (Hi-Sincerity Microelectronics Corp. ): 10F. ,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R. O. C. Tel:
