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HIRF630, HIRF630_Hi N-Channel MOSFET

HIRF630 Description

HI-SINCERITY MICROELECTRONICS CORP.Spec.No.: MOS200401 Issued Date : 2004.04.01 Revised Date : 2005.04.22 Page No.: 1/6 HIRF630 / HIRF630F N-CHA.
This power MOSFET is designed for low voltage, high speed power switching applications such as switching regulators, conveters, solenoid and relay dri.

HIRF630 Features

* Dynamic dv/dt Rating
* Repetitive Avalanche Rated
* Fast Switching
* Ease of Paralleling
* Simple Drive Requirements Thermal Characteristics Symbol Parameter RθJC Thermal Resistance Junction to Case Max. RθJA Thermal Resistance Junction to Ambient Max

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: HIRF630, HIRF630_Hi. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
HIRF630, HIRF630_Hi
Manufacturer
Hi-Sincerity Mocroelectronics
File Size
76.12 KB
Datasheet
HIRF630_Hi-SincerityMocroelectronics.pdf
Description
N-Channel MOSFET
Note
This datasheet PDF includes multiple part numbers: HIRF630, HIRF630_Hi.
Please refer to the document for exact specifications by model.

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N-Channel MOSFET Hi-Sincerity Mocroelectronics
Hi-Sincerity Mocroelectronics HIRF630-like datasheet