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HI669A, HI669A_Hi - NPN Transistor

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This datasheet PDF includes multiple part numbers: HI669A, HI669A_Hi. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number HI669A, HI669A_Hi
Manufacturer Hi-Sincerity Mocroelectronics
File Size 191.95 KB
Description NPN Transistor
Datasheet download datasheet HI669A_Hi-SincerityMocroelectronics.pdf
Note This datasheet PDF includes multiple part numbers: HI669A, HI669A_Hi.
Please refer to the document for exact specifications by model.

HI669A Product details

Description

The HI669A is designed for low frequency power amplifier. Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum Power Dissipation Total Power Dissipation (Tc=25°C) 1 W Maximum Voltages and Currents BVCBO Collector to Base Voltage 180 V BVCEO Collector to Emitter Voltage 160 V BVEBO Emitter to Base Voltage 5 V IC Collector Current 1.5 A Characteristics (Ta=25°C) Symbol BVCBO BVCEO

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