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HI649A, HI649A_Hi - PNP Transistor

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This datasheet PDF includes multiple part numbers: HI649A, HI649A_Hi. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number HI649A, HI649A_Hi
Manufacturer Hi-Sincerity Mocroelectronics
File Size 192.82 KB
Description PNP Transistor
Datasheet download datasheet HI649A_Hi-SincerityMocroelectronics.pdf
Note This datasheet PDF includes multiple part numbers: HI649A, HI649A_Hi.
Please refer to the document for exact specifications by model.

HI649A Product details

Description

The HI649A is designed for low frequency power amplifier. Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum Power Dissipation Total Power Dissipation (Tc=25°C) 20 W Maximum Voltages and Currents BVCBO Collector to Base Voltage -180 V BVCEO Collector to Emitter Voltage -160 V BVEBO Emitter to Base Voltage -5 V IC Collector Current -1.5 A Characteristics (Ta=25°C) Symbol BVCBO B

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