HI112, HI112_Hi NPN EPITAXIAL PLANAR TRANSISTOR

Hi-Sincerity Mocroelectronics

Description

HI-SINCERITY MICROELECTRONICS CORP.Spec.No.: HE9033 Issued Date : 1998.07.01 Revised Date : 2002.01.11 Page No.: 1/4 HI112 NPN EPITAXIAL PLANAR .
The HI112 is designed for use in general purpose amplifier and lowspeed switching applications.

📥 Download Datasheet

HI112 Datasheet Preview — This datasheet PDF includes multiple part numbers: HI112, HI112_Hi. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: HI112, HI112_Hi
Manufacturer: Hi-Sincerity Mocroelectronics
File Size: 70.50 KB
Datasheet: HI112_Hi-SincerityMocroelectronics.pdf
Description: NPN EPITAXIAL PLANAR TRANSISTOR
Note: This datasheet PDF includes multiple part numbers: HI112, HI112_Hi.
Please refer to the document for exact specifications by model.

Applications

* Absolute Maximum Ratings (Ta=25°C) TO-251
* Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature 150 °C Maximum
* Maximum Power Dissipation Total Power Dissipation (Ta=25°C) 25 W
* Maximum Voltages and Currents (Ta=25°C) VCBO Collector to Base Vo

HI112 Distributors

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HI112_Hi NPN EPITAXIAL PLANAR TRANSISTOR Hi-Sincerity Mocroelectronics

Hi-Sincerity Mocroelectronics HI112-like datasheet