HI1109, HI1109_Hi PNP EPITAXIAL PLANAR TRANSISTOR

Hi-Sincerity Mocroelectronics

Description

HI-SINCERITY MICROELECTRONICS CORP.Spec.No.: HE9019-B Issued Date : 1996.04.15 Revised Date : 2000.11.01 Page No.: 1/3 HI1109 PNP EPITAXIAL PLAN.
Low frequency high voltage amplifier. Complementary pair with HI1609 Absolute Maximum Ratings (Ta=25°C). Maximum Temperat.

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HI1109 Datasheet Preview — This datasheet PDF includes multiple part numbers: HI1109, HI1109_Hi. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: HI1109, HI1109_Hi
Manufacturer: Hi-Sincerity Mocroelectronics
File Size: 59.04 KB
Datasheet: HI1109_Hi-SincerityMocroelectronics.pdf
Description: PNP EPITAXIAL PLANAR TRANSISTOR
Note: This datasheet PDF includes multiple part numbers: HI1109, HI1109_Hi.
Please refer to the document for exact specifications by model.

Applications

* or systems.
* HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory :
* Head Office (Hi-Sincerity Microelectronics Corp. ) : 10F. ,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R. O. C. Te

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HI1109_Hi PNP EPITAXIAL PLANAR TRANSISTOR Hi-Sincerity Mocroelectronics

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