HBD678, HBD678_Hi - NPN EPITAXIAL PLANAR TRANSISTOR

Hi-Sincerity Mocroelectronics

The HBD678 by Hi-Sincerity Mocroelectronics is a NPN EPITAXIAL PLANAR TRANSISTOR. Below is the official datasheet preview.

Datasheet Details

Part number	HBD678, HBD678_Hi
Manufacturer	Hi-Sincerity Mocroelectronics
File Size	22.84 KB
Description	NPN EPITAXIAL PLANAR TRANSISTOR
Datasheet	HBD678_Hi-SincerityMocroelectronics.pdf
Note	This datasheet PDF includes multiple part numbers: HBD678, HBD678_Hi. Please refer to the document for exact specifications by model.
Additional preview pages of the HBD678 datasheet.

The HBD678 is designed for use as output devices in complementary general purpose amplifier applications.

High Current Gain.
Monolithic Constructor Absolute Maximum Ratings (Ta=25°C).
Maximum Temperatures Storage Temperature -50 ~ +150 °C Junction Temperature +150 °C Maximum.
Maximum Power Dissipation Total Power Dissipation (Tc=25°C) 40 W.
Maximum Voltages and Currents BVCBO Collector to Base Voltage 60 V BVCEO Collector to Emitter Voltage 60 V BVEBO Emitter to Base Voltage 5 V IC Collector Current 4 A IB Base Current 1 A Electrical Characteris.

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Published: Mar 23, 2005 |