The HBD677 by Hi-Sincerity Mocroelectronics is a NPN EPITAXIAL PLANAR TRANSISTOR. Below is the official datasheet preview.
| Part number | HBD677, HBD677_Hi |
|---|---|
| Manufacturer | Hi-Sincerity Mocroelectronics |
| File Size | 30.23 KB |
| Description | NPN EPITAXIAL PLANAR TRANSISTOR |
| Datasheet |
 HBD677_Hi-SincerityMocroelectronics.pdf
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| Note |
This datasheet PDF includes multiple part numbers: HBD677, HBD677_Hi. Please refer to the document for exact specifications by model. |
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The HBD677 is designed for use as output devices in complementary general purpose amplifier applications. Maximum Temperatures Storage Temperature -50 ~ +150 °C Junction Temperature +150 °C Maximum Maximum Power Dissipation Total Power Dissipation (Tc=25°C) 20 W Maximum Voltages and Currents BVCBO Collector to Base Voltage 60 V BVCEO Collector to Emitter Voltage 60 V BVEBO Emitter to Base Voltage 5 V IC Collector Current 4 A
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